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B170/B - B1100/B
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features
* * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application High Temperature Soldering: 260C/10 Second at Terminal Plastic Material: UL Flammability Classification Rating 94V-0
B
Dim A
SMA Min 2.29 4.00 1.27 0.15 4.80 0.10 0.76 2.01 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62
SMB Min 3.30 4.06 1.96 0.15 5.00 0.10 0.76 2.00 Max 3.94 4.57 2.21 0.31 5.59 0.20 1.52 2.62
A
C
B C D
D
J
E G H J
Mechanical Data
* * * * * * * Case: SMA / SMB, Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Mounting Position: Any Marking: Type Number
H
G E
All Dimensions in mm No Suffix Designates SMA Package "B" Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 125C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @ IF = 1.0A Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Terminal (Note 1) Operating and Storage Temperature Range @ TA = 25C @ TA = 100C @ TA = 25C @ TA = 100C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJT Tj, TSTG
@ TA = 25C unless otherwise specified
B170/B 70 49
B180/B 80 56 1.0 30 0.79 0.69 0.5 5.0 80 25
B190/B 90 63
B1100/B 100 70
Unit V V A A V mA pF K/W C
-65 to +150
Notes:
1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30018 Rev. B-2
1 of 2
B170/B - B1100/B
I(AV), AVERAGE FORWARD CURRENT (A)
1.0
IF, INSTANTANEOUS FORWARD CURRENT (A)
10
1.0
0.5
0.1
0 25 50 75 100 125 150 TT, TERMINAL TEMPERATURE (C) Fig. 1 Forward Current Derating Curve
40
0.01 0 0.2 0.4
Tj - 25C IF Pulse Width = 300s
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
1000
IFSM, PEAK FORWARD SURGE CURRENT (A)
30
Cj, JUNCTION CAPACITANCE (pF)
Single Half Sine-Wave (JEDEC Method)
Tj = 25C f = 1.0MHz
20
100
10
Tj = 150C
0
10
1
10
100
0.1
1
10
100
NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
DS30018 Rev. B-2
2 of 2
B170/B - B1100/B

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